Long-Wavelength Infrared Surface Plasmons on Ga-Doped ZnO Films Excited via 2D Hole Arrays for Extraordinary Optical Transmission
Document Type
Article
Publication Date
1-1-2013
Identifier/URL
40909433 (Pure)
Abstract
Extraordinary optical transmission (EOT) through highly conductive ZnO films with sub-wavelength hole arrays is investigated in the long-wavelength infrared regime. EOT is facilitated by the excitation of surface plasmon polaritons (SPPs) and can be tuned utilizing the physical structure size such as period. Pulse laser deposited Ga-doped ZnO has been shown to have fluctuations in optical and electrical parameters based on fabrication techniques, providing a complimentary tuning means. The sub-wavelength 2D hole arrays are fabricated in the Ga-doped ZnO films via standard lithography and etching processes. Optical reflection measurements completed with a microscope coupled FTIR system contain absorption resonances that are in agreement with analytical theories for excitation of SPPs on 2D structures. EOT through Ga-doped ZnO is numerically demonstrated at wavelengths where SPPs are excited. This highly conductive ZnO EOT structure may prove useful in novel integrated components such as tunable biosensors or surface plasmon coupling mechanisms.
Repository Citation
Brillson, L. J.,
Zhang, Z.,
Doutt, D. R.,
Look, D. C.,
Svensson, B. G.,
Kuznetsov, A. Y.,
& Tuomisto, F.
(2013). Long-Wavelength Infrared Surface Plasmons on Ga-Doped ZnO Films Excited via 2D Hole Arrays for Extraordinary Optical Transmission. Plasmonics, 8809, 88090L.
https://corescholar.libraries.wright.edu/physics/1528
DOI
10.1117/12.2022278
Comments
Presented at the 2013 SPIE OTO Conference that took place from February 2-7, 2013 in San Francisco, California.