Properties of CdZnO/ZnO Heterostructures for UV Light Emitters

Document Type

Article

Publication Date

1-1-2006

Identifier/URL

41027879 (Pure)

Abstract

In the paper we present band-gap alignment diagrams for type-II/type-I heterostructures incorporating the strong piezoelectric and spontaneous polarization fields in ZnCdMgO and AlGaN-based materials and interfaces. The paper describes some of the recent progress made in the development of high quality ZnCdO layers and CdZnO/ZnO heterostructures grown epitaxially by RF-plasma molecular beam epitaxy (MBE). We summarize optical and electrical properties of high quality CdxZn1-xO alloys with Cd mole fraction from 0.02 to 0.78 and discuss phase separation phenomenon, which may be present in ternary alloys. A single-crystal wurtzite structure of CdZnO alloys has been confirmed. We achieved a strong optical emission at RT in the 380 nm to 574 nm spectral range from CdxZn1-xO with various compositions. Dependence of the fundamental optical band gap on the composition of CdxZn1- xO alloys, band gap bowing, and the possible effect of composition micro-fluctuations in ternary CdxZn1-xO alloys on the optical bandgap is also discussed. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49{plus minus}3 psec. lifetimes, suggesting that composition micro- fluctuations may be present in Cd0.16Zn0.84O film. We also report on crystallographic and optical properties of CdZnO/ZnO multiple quantum wells.

DOI

10.1149/1.2357221

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