ZnO-Based Metal-Insulator-Semiconductor UV Light-Emitting Diodes Prepared by Ion Implantation
Document Type
Article
Publication Date
1-1-2003
Identifier/URL
40971222 (Pure)
Abstract
In this paper, we describe the N/sup +/-ion implantation of Ga doped ZnO films grown by chemical vapor deposition on a sapphire substrate. Depositing an appropriate metal onto this system can create a metal-insulator-semiconductor (MIS) type diode. Such ZnO-based MIS diodes, and their emission properties are discussed. The ohmic contact, to the lower conducting ZnO insulating layer, is made by indium. Current-voltage measurements shows good, rectifying diode-like behavior, with a threshold voltage near 3 V, and a reverse current of about 10/sup -6/ A. Under forward bias, ultraviolet emission is observed at room temperature (RT), with a wavelength maximum at /spl sim/388 m (/spl sim/3.197 eV).
Repository Citation
Cleary, J. W.,
Snure, M.,
Leedy, K. D.,
Look, D. C.,
Eyink, K.,
& Tiwari, A.
(2003). ZnO-Based Metal-Insulator-Semiconductor UV Light-Emitting Diodes Prepared by Ion Implantation. International Semiconductor Device Research Symposium, 2003, 9-10.
https://corescholar.libraries.wright.edu/physics/1541
DOI
10.1109/ISDRS.2003.1271959
Comments
This paper was presented at the 2003 International Semiconductor Device Research Symposium, December 10-12, 2003, Washington, D.C.