Characterization of Material Device Structures
Document Type
Article
Publication Date
2-1-1987
Identifier/URL
42883775 (Pure)
Abstract
Impurities and defects in semiconducting and semi-insulating GaAs and other III-V compounds have been investigated by electrical, optical, and mass spectroscopic techniques. Modulation-doped field-effect transistors have been fabricated and tested. A CAE/CAD environment has been implemented for the design, development, and evaluation of electronic circuitry.
Repository Citation
Look, D. C.
(1987). Characterization of Material Device Structures. Final Report, Jan. 1984 - Sep. 1986 Wright State Univ., Dayton, OH..
https://corescholar.libraries.wright.edu/physics/1543
