Magnetoresistance of GdRh1.07Sn4.21
Document Type
Article
Publication Date
1-1-1985
Abstract
The electrical resistivity and magnetoresistance (MR) of single-crystal antiferromagnetic GdRh1.07Sn4.21 have been studied from 4.2 to 25K and in a magnetic field up to 30 kOe. Below TN the resistivity can be attributed to electron-spin-wave scattering. A positive MR at temperatures below TN is believed to arise from the field-induced enhancement of the spin fluctuations. The field dependence of the MR is quadratic at lower fields and it has an inverse temperature dependence below TN.
Repository Citation
Ali, N.,
Woods, S. B.,
Kozlowski, G.,
& Rojek, A.
(1985). Magnetoresistance of GdRh1.07Sn4.21. Journal of Physics F: Metal Physics, 15 (1), 155-160.
https://corescholar.libraries.wright.edu/physics/1601
DOI
10.1088/0305-4608/15/1/017
