Defects at Oxygen Plasma Cleaned ZnO Polar Surfaces

Authors

Y. F. Dong
Z-Q. Fang
David C. Look, Wright State University - Main CampusFollow
Daniel R. Doutt
G. Cantwell
J. Zhang
J. J. Song
L. J. Brillson

Document Type

Article

Publication Date

11-1-2010

Abstract

Depth-resolved cathodoluminescence spectroscopy (DRCLS) reveals the evolution of surface and near surface defects at polar surfaces with remote oxygen plasma (ROP) treatment. Furthermore, this evolution exhibits significant differences that depend on surface polarity. ROP decreased the predominant 2.5 eV defect emission related to oxygen vacancies on the O face, while creating a new 2.1 eV defect emission on the Zn face that increases with ROP time. The surface-located 2.1 eV emission correlates with carrier profiles from capacitance-voltage measurements and a shift of the E3 trap to higher binding energy from deep level transient spectroscopy (DLTS). This result suggests that ROP generates Zn vacancies on the Zn face which act as compensating acceptors at the surface and in the near surface region. Secondary ion mass spectrometry (SIMS) shows no polarity dependence due to impurities. We conclude that the near-surface deep level optical emissions and free carrier densities of ZnO depend strongly on the ROP modulation of native defects related to Zn or O vacancies.

Comments

Copyright © 2010, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 108.10, and may be found at http://jap.aip.org/resource/1/japiau/v108/i10/p103718_s1

Repository Citation

Dong, Y. F., Fang, Z., Look, D. C., Doutt, D. R., Cantwell, G., Zhang, J., Song, J. J., & Brillson, L. J. (2010). Defects at Oxygen Plasma Cleaned ZnO Polar Surfaces. Journal of Applied Physics, 108 (10), 103718.
https://corescholar.libraries.wright.edu/physics/167

DOI

10.1063/1.3514102