Magneto-Hall and magnetoresistance formulas, correct to order B2, are derived for the case in which both single-carrier and mixed-carrier effects are important. Also, a new magneto-Hall coefficient Is Presented: β=‹π4›‹π›/‹π2›3 - 1. Values of β for various scattering mechanisms are calculated and compared with experiment
Look, D. C.
(1982). Magneto-Hall and Magnetoresistance Coefficients in Semiconductors with Mixed Conductivity. Physical Review B, 25 (4), 2920-2922.