Document Type

Article

Publication Date

12-1-1982

Abstract

Temperature-dependent Hall-effect measurements on two Cr-doped GaAs samples
show a dominant center at E1 =0.324—1.4 x 10-4T eV, with respect to the valence-band edge. By comparison with secondary-ion mass spectroscopy measurements of the Cr concentration, and recent EPR measurements of the Cr2+, Cr3+, and Cr4+ concentration in several samples, it is shown unambiguously that this energy describes the Cr4+→Cr3+ transition. This is the first conclusive evidence for a charge-state transition involving Cr4+ in GaAs.

Comments

The original publication is available at http://prl.aps.org/abstract/PRL/v49/i23/p1728_1

DOI

10.1103/PhysRevLett.49.1728

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