Recently we have reproducibly grown vapor-phase epitaxial GaAs, with less than 10% compensation, in an AsC13-Ga-H2 reactor. The low-temperature electrical properties of such samples are quite interesting, with neutral-impurity scattering and screening being much more important than usual. The Hall mobility is typically above 105 cm2/V sec at 5 K and has two maxima as a function of temperature, the usual one near 50 K and another near 9 K, The latter phenomenon has not been observed before, to our knowledge, The mobility and carrier concentration temperature dependences for a low-compensation sample and a normal-compensation sample are theoretically fitted to determine the donor and acceptor concentrations. The low-compensation sample has NA/ND =0.06 +/- 0.03.
Look, D. C.,
& Colter, P. C.
(1983). Electrical-Properties of Low-Compensation GaAs. Physical Review B, 28 (2), 1151-1153.