Demonstration of Semiconductor Characterization by Phonon Side-Band in Photoluminescence

Authors

D. C. ReynoldsFollow
David C. Look, Wright State University - Main CampusFollow
D. N. Talwar
G. L. McCoy
K. R. EvansFollow

Document Type

Article

Publication Date

1-1-1995

Abstract

In this paper two GaAs samples were investigated; one was a very pure sample grown by chemical-vapor deposition, the other was grown by molecular-beam epitaxy. The dominant optical transition in the high-purity sample was the donor-bound-exciton transition. Phonon sidebands associated with both the free exciton and the donor-bound exciton were observed. The active phonons were the longitudinal-optical (LO) and the transverse-optical (TO) modes associated with both the free exciton and the donor-bound exciton at the Γ point in k space; the TO mode from the donor-bound exciton at the X point, the LO from the free exciton at the L point and/or X point, and the longitudinal-acoustical mode from the free exciton at the X point and the L point. These phonon-coupled exciton transitions were not observed in the sample grown by molecular-beam epitaxy; however, phonon sidebands associated with free-to-bound and bound-to-bound transitions were observed. The transverse-acoustical mode at the X point was observed along with lower-energy modes that were attributed to impurity and defect structures in the material.

Comments

The original publication is available at http://prb.aps.org/abstract/PRB/v51/i4/p2572_1

Repository Citation

Reynolds, D. C., Look, D. C., Talwar, D. N., McCoy, G. L., & Evans, K. R. (1995). Demonstration of Semiconductor Characterization by Phonon Side-Band in Photoluminescence. Physical Review B, 51 (4), 2572-2575.
https://corescholar.libraries.wright.edu/physics/198

DOI

10.1103/PhysRevB.51.2572