Evidence for Native-Defect Donors in n-Type ZnO

Authors

David C. Look, Wright State University - Main CampusFollow
Gary C. Farlow, Wright State University - Main CampusFollow
Pakpoom Reunchan
Sukit Limpijumnong
S. B. Zhang
K. Nordlund

Document Type

Article

Publication Date

11-1-2005

Abstract

Recent theory has found that native defects such as the O vacancy V_O and Zn interstitial Zn_I have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory and experiment to show that, under N ambient, the complex Zn_I-N_O is a stronger candidate than H or any other known impurity for a 30 meV donor commonly found in bulk ZnO grown from the vapor phase. Since the Zn vacancy is also the dominant acceptor in such material, we must conclude that native defects are important donors and acceptors in ZnO.

Comments

The original publication is available at http://prl.aps.org/abstract/PRL/v95/i22/e225502

Repository Citation

Look, D. C., Farlow, G. C., Reunchan, P., Limpijumnong, S., Zhang, S. B., & Nordlund, K. (2005). Evidence for Native-Defect Donors in n-Type ZnO. Physical Review Letters, 95 (22), 225502.
https://corescholar.libraries.wright.edu/physics/218

DOI

10.1103/PhysRevLett.95.225502