Theoretical and Experimental Capacitance-Voltage Behavior of Al0.3Ga0.7As GaAs Modulation-Doped Heterojunctions - Relation of Conduction-Band Discontinuity to Donor Energy

Authors

George B. Norris
David C. Look, Wright State University - Main CampusFollow
W. Kopp
J. Klem
H. Morkoç

Document Type

Article

Publication Date

8-1-1985

Abstract

For the first time, we show that the capacitance-voltage behavior of modulation-doped heterojunctions may be accurately described by a first-principles theory that includes selfconsistent quantum two-dimensional (2-D) electron subbands in the GaAs, numerical solution of Poisson's equation for band bending and space charge in the (Al,Ga) As, and series resistance in the 2-D channel and heterointerface. The excellent agreement found between the theory and measurements on selected high-quality Al_0.3Ga_0.7 As/GaAs heterojunctions allows accurate determination of the maximum 2-D carrier concentration. From this, we find a strong relationship between the conduction-band discontinuity and donor binding energy, giving offsets. of 76 and 66% of the direct gap discontinuity for binding energies of 66 and 30 meV, as derived from published data

Comments

Copyright © 1985, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 47.4, and may be found at http://apl.aip.org/resource/1/applab/v47/i4/p423_s1

Repository Citation

Norris, G. B., Look, D. C., Kopp, W., Klem, J., & Morkoç, H. (1985). Theoretical and Experimental Capacitance-Voltage Behavior of Al0.3Ga0.7As GaAs Modulation-Doped Heterojunctions - Relation of Conduction-Band Discontinuity to Donor Energy. Applied Physics Letters, 47 (4), 423-425.
https://corescholar.libraries.wright.edu/physics/31

DOI

10.1063/1.96132