Annealing Studies on GaN Hydride Vapor Phase Epitaxial Layers
Document Type
Article
Publication Date
3-3-1999
Abstract
A dramatic change is observed in the photoluminescence spectrum of a GaN sample after annealing at a temperature of similar to 835 degrees C. The as-grown sample, and the same sample annealed at 830 degrees C, show a single dominant donor-bound-exciton (D-0, X) emission line. After annealing at similar to 835 degrees C, the emission evolves into at least four broader emission lines. increasing the annealing temperature to 840 degrees C reverses the emission spectrum back to the single D-0, X line. Repeating the 835 degrees C anneal again produces the evolved spectrum. We propose a model that can account for all of the spectral lines that are generated by the 835 degrees C anneal. We also suggest some possible explanations for the dramatic changes that occur in the emission spectrum when the annealing is carried out over small temperature intervals. (C) 1999 Elsevier Science Ltd. All rights reserved.
Repository Citation
Look, D. C.,
Reynolds, D. C.,
Wille, T.,
Bajaj, K. K.,
Collins, T. C.,
& Molnar, R. J.
(1999). Annealing Studies on GaN Hydride Vapor Phase Epitaxial Layers. Solid State Communications, 109 (11), 683-686.
https://corescholar.libraries.wright.edu/physics/358
DOI
10.1016/S0038-1098(99)00016-2
