Infrared Transmission Topography for Whole-Wafer Gallium-Arsenide Materials Characterization

Authors

M. G. Mier
David C. Look, Wright State University - Main CampusFollow
D. C. Walters
D. L. Beasley

Document Type

Article

Publication Date

3-1992

Abstract

Infrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half-millimeter resolution plots of EL2 density and dislocation density are shown to correlate with plots of saturation current in MESFET devices at an early stage of fabrication.

Repository Citation

Mier, M. G., Look, D. C., Walters, D. C., & Beasley, D. L. (1992). Infrared Transmission Topography for Whole-Wafer Gallium-Arsenide Materials Characterization. Solid-State Electronics, 35 (3), 319-323.
https://corescholar.libraries.wright.edu/physics/367

DOI

10.1016/0038-1101(92)90235-5