Nonalloyed Ohmic Contacts on Low-Temperature Molecular-Beam Epitaxial GaAs: Influence of Deep Donor Band

Authors

H. Yamamoto
Z-Q. FangFollow
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

10-1-1990

Abstract

The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200 °C was studied. The specific contact resistances at room temperature and 120 K were 1.5×10⁻³ and 7.0×10⁻¹ Ω cm², respectively. These values are anomalously low considering that the conduction‐band electron concentration in this material is less than 10¹¹ cm⁻³ at room temperature. The experimental results indicate that the carrier transport at the metal/semiconductor interface is dominated by a dense (∼3×10¹⁹ cm⁻³) EL2‐like deep donor band, rather than the usual conduction band.

Comments

Copyright © 1990, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 57.15, and may be found at http://apl.aip.org/resource/1/applab/v57/i15/p1537_s1

Repository Citation

Yamamoto, H., Fang, Z., & Look, D. C. (1990). Nonalloyed Ohmic Contacts on Low-Temperature Molecular-Beam Epitaxial GaAs: Influence of Deep Donor Band. Applied Physics Letters, 57 (15), 1537-1539.
https://corescholar.libraries.wright.edu/physics/37

DOI

10.1063/1.103345