Point Defects in Undoped Semi-insulating GaAs: Correlation Between thermally Stimulated Current and Positron Annihilation Spectroscopies

Authors

C. Look, Wright State University - Main CampusFollow
Z-Q. FangFollow
S. Kuisma
K. Saarinen
P. Hautojarvi

Document Type

Conference Proceeding

Publication Date

1996

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Abstract

Point defects and the main electron traps in undoped semi-insulating GaAs grown by vertical gradient freeze and high- and low-pressure liquid encapsulated Czochralski techniques have been studied by positron annihilation (PAS) and thermally stimulated current (TSC) spectroscopies, respectively. We find good correlations between the concentrations of the TSC traps T-2 (0.63 eV) and T-5 (0.35 eV), and the PAS identified-defects As-Ga, and V-As, respectively. A good correlation between the concentration of intrinsic accepters (V-Ga and Ga-As) measured by PAS, and the total acceptor concentration measured by infrared absorption, is also found.

Comments

Proceedings from the 9th Conference on Semiconducting and Insulating Materials, April 29-May 3, 1996, in Toulouse, France.

Repository Citation

Look C., Fang, Z., Kuisma, S., Saarinen, K., & Hautojarvi, P. (1996). Point Defects in Undoped Semi-insulating GaAs: Correlation Between thermally Stimulated Current and Positron Annihilation Spectroscopies. Semiconducting and Insulating Materials, 1996: Proceedings of The 9th Conference on Semiconducting and Insulating Materials (Simc'96), 149-154.
https://corescholar.libraries.wright.edu/physics/372