Accurate Measurement of Capture Cross Sections in Deep Level Transient Spectroscopy: Application to EL2 in GaAs
A rigorous formulation of capacitance changes during trap filling processes is presented and used to accurately determine the electron capture cross section of EL2 in GaAs at a particular temperature, 377K, in this case. The value, sigma(n) (377K) = 2.7 x 10(-16) cm(2), is compared with that predicted from the emission dependence.
Look, D. C.,
& Sizelove, J. R.
(1995). Accurate Measurement of Capture Cross Sections in Deep Level Transient Spectroscopy: Application to EL2 in GaAs. Journal of Electronic Materials, 24 (10), 1461-1464.