Convenient Determination of Concentration and Energy in Deep-Level Transient Spectroscopy

Authors

David C. Look, Wright State University - Main CampusFollow
Z-Q. FangFollow
J. R. Sizelove

Document Type

Article

Publication Date

2-1-1995

Abstract

For defects or impurities with deep energy levels, such as the commonly observed EL2, EL3, and EL6 in GaAs, it is very important to take account of the so‐called λ effect in order to deduce the correct concentrations of these centers when using capacitance techniques. By measuring capacitance at several forward bias voltages for a given reverse bias voltage it is possible to determine concentration N_T and energy E_T without requiring the usual emission rate analysis. Convenient formulas for N_T and E_T are given, although only N_T can be determined with a high degree of precision. The results for an n‐type horizontal Bridgman wafer (n≂2.8×10¹⁶ cm⁻³) are: N_EL2=(1.14±0.02)×10¹⁶ cm⁻³, E_EL2(377 K)=0.71±0.06 eV; N_EL6=(8.0±0.5)×10¹⁵ cm⁻³, E_EL6(167 K)=0.42±0.09 eV.

Comments

Copyright © 1995, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 77.4, and may be found at http://jap.aip.org/resource/1/japiau/v77/i4/p1407_s1

Repository Citation

Look, D. C., Fang, Z., & Sizelove, J. R. (1995). Convenient Determination of Concentration and Energy in Deep-Level Transient Spectroscopy. Journal of Applied Physics, 77 (4), 1407-1410.
https://corescholar.libraries.wright.edu/physics/129

DOI

10.1063/1.358953