Shallow Donor Generation in ZnO by Remote Hydrogen Plasma
Document Type
Article
Publication Date
2005
Abstract
We investigate the effects of a remote hydrogen-plasma treatment on Hall parameters as well as on the bound exciton (BEx) photoluminescence (PL) for a variety of ZnO single crystals: bulk air-annealed, Li-doped, and epitaxially grown on sapphire. We present transport and spectroscopic evidence in favor of the hypothesis that hydrogen behaves as a shallow donor rather than a compensating center in ZnO. Specifically, we show that H-plasma-induced increases in 14 luminescence (photon energy: -3.363 eV at 4 K) correlate with increases in free-carrier concentrations from Hall-effect measurements.
Repository Citation
Look, D. C.,
Strzhemechny, Y. M.,
Mosbacker, H. L.,
Goss, S. H.,
Reynolds, D. C.,
Litton, C. W.,
Garces, N. Y.,
Giles, N. C.,
Niki, S.,
& Brillson, L. J.
(2005). Shallow Donor Generation in ZnO by Remote Hydrogen Plasma. Journal of Electronic Materials, 34 (4), 399-403.
https://corescholar.libraries.wright.edu/physics/409
DOI
10.1007/s11664-005-0118-1
