X‐ray photoelectron spectroscopic results show that molecular beam epitaxial GaAs grown at 200 °C has a reduced effective surface potential energy, about 0.5 eV, compared with the usual 0.7 eV. A Poisson analysis of the data, using parameters from Hall effect and absorption measurements, requires that the Fermi‐level‐controlling defect in this material must have a significantly lower activation energy than that of EL2, an unexpected result.
Look, D. C.,
Grant, J. T.,
& Sizelove, J. R.
(1992). Shifted X-Ray Photoelectron Peak in Molecular-Beam Epitaxial GaAs Grown at 200 Degrees C. Applied Physics Letters, 61 (11), 1329-1331.