Shallow Acceptors in GaAs Grown from the Vapour Phase
Document Type
Article
Publication Date
12-1997
Abstract
The photoluminescent spectra from high-quality GaAs crystals grown from the vapour phase reveal a dominant Zn acceptor and a C acceptor, as well as an acceptor that would appear to have a smaller binding energy than C. We show that this shallowest acceptor is not a discrete chemical acceptor, having a smaller binding energy than C, but is rather due to a complex centre.
Repository Citation
Reynolds, D. C.,
Look, D. C.,
Jogai, B.,
& McCoy, G. L.
(1997). Shallow Acceptors in GaAs Grown from the Vapour Phase. Journal of Physics-Condensed Matter, 9 (48), 10795-10799.
https://corescholar.libraries.wright.edu/physics/429
DOI
10.1088/0953-8984/9/48/021
