Native Donors and Acceptors in Molecular-Beam Epitaxial GaAs Grown At 200 Degrees C

Authors

David C. Look, Wright State University - Main CampusFollow
D. C. Walters
M. MierFollow
C. E. Stutz
S. K. Brierley

Document Type

Article

Publication Date

6-1-1992

Abstract

Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoionization cross sections for EL2 to determine deep donor (EL2‐like) and acceptor concentrations N_D=9.9×10¹⁹ and N_A=7.9×10¹⁸ cm⁻³, respectively, in a 2‐μm‐thick molecular‐beam epitaxial GaAs layer grown at 200 °C on a 2‐in.‐diam semi‐insulating wafer. Both lateral and depth uniformities of N_D over the wafer were excellent as was also the case for the conductivity. Band conduction was negligible compared to hopping conduction at 296 K as evidenced by the lack of a measurable Hall coefficient.

Comments

Copyright © 1992, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 60.23, and may be found at http://apl.aip.org/resource/1/applab/v60/i23/p2900_s1

Repository Citation

Look, D. C., Walters, D. C., Mier, M., Stutz, C. E., & Brierley, S. K. (1992). Native Donors and Acceptors in Molecular-Beam Epitaxial GaAs Grown At 200 Degrees C. Applied Physics Letters, 60 (23), 2900-2902.
https://corescholar.libraries.wright.edu/physics/44

DOI

10.1063/1.106813