Dissociation Of V-Ga-O-N Complexes In HVPE GaN by High Pressure and High Temperature Annealing
Document Type
Article
Publication Date
6-2006
Abstract
We have used positron annihilation spectroscopy to study the high-pressure annealing induced thermal recovery of vacancy defects in free-standing GaN grown by hydride vapor phase epitaxy (HYPE). The results show that the in-grown Ga vacancy complexes recover after annealing at 1500-1700 K. Comparison of the experimental positron data with ab-initio calculations indicates that the Doppler broadening measurement of the electron momentum distribution is sensitive enough to distinguish between the N and O atoms surrounding the Ga vacancy. We show that the difference between the isolated V-Ga in electron irradiated GaN and the V-Ga-O-N complexes in highly O-doped GaN is clear, and the Ga vacancy related defect complexes that start dissociating at 1500 K can be identified as V-Ga-O-N pairs.
Repository Citation
Tuomisto, F.,
Hautakangas, S.,
Makkonen, I.,
Ranki, V.,
Puska, M. J.,
Saarinen, K.,
Bockowski, M.,
Suski, T.,
Paskova, T.,
Monemar, B.,
Xu, X.,
& Look, D. C.
(2006). Dissociation Of V-Ga-O-N Complexes In HVPE GaN by High Pressure and High Temperature Annealing. Physica Status Solidi B-Basic Solid State Physics, 243 (7), 1436-1440.
https://corescholar.libraries.wright.edu/physics/455
DOI
10.1002/pssb.200565109
