Donor and Acceptor Concentrations in Molecular-Beam Epitaxial GaAs Grown at 300-Degrees-C and 400-Degrees-C

Authors

David C. Look, Wright State University - Main CampusFollow
G. D. Robinson
J. R. Sizelove
C. E. Stutz

Document Type

Article

Publication Date

6-1-1993

Abstract

The first Hall‐effect measurements on molecular beam epitaxial GaAs layers grown at the low temperatures of 300 and 400 °C are reported. Two independent methods were used to determine donor N_D and acceptor N_A concentrations and activation energy E_D0, with the following combined results: N_D≂3±1×10¹⁸, N_A≂1.5±1×10¹⁷ cm⁻³, and E_D0=0.645±0.009 eV for the 300 °C layer; N_D≂2±1×10¹⁷, N_A≂7±3×10¹⁶ cm⁻³, and E_D0=0.648±0.003 eV for the 400 °C layer. Thus, the deep donor is not the expected EL2, which has E_D0=0.75±0.01 eV.

Comments

Copyright © 1993, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 62.23, and may be found at http://apl.aip.org/resource/1/applab/v62/i23/p3004_s1

Repository Citation

Look, D. C., Robinson, G. D., Sizelove, J. R., & Stutz, C. E. (1993). Donor and Acceptor Concentrations in Molecular-Beam Epitaxial GaAs Grown at 300-Degrees-C and 400-Degrees-C. Applied Physics Letters, 62 (23), 3004-3006.
https://corescholar.libraries.wright.edu/physics/47

DOI

10.1063/1.109171