Nondestructive Mapping of Carrier Concentration and Dislocation Density in N(+)-Type GaAs

Authors

David C. Look, Wright State University - Main CampusFollow
D. C. Walters
M. G. MierFollow
J. R. Sizelove

Document Type

Article

Publication Date

10-1-1994

Abstract

Transmission mappings (500 μm×500 μm resolution) at wavelengths of 0.9–1.5 μm on 3 in., n⁺‐GaAs wafers (n≂1–2×10¹⁸ cm^-3) correlate well with carrier concentration n, measured by the Hall effect, and dislocation density, as confirmed by KOH etch‐pit patterns. The absorption for λ≳1.0 μm (below band edge) varies directly with n via free‐carrier interconduction‐band transitions, while the absorption for λ≲0.95 μm (near band edge) varies inversely with n because of band‐filling effects. Both phenomena are highly useful for n⁺‐GaAs wafer characterization.

Comments

Copyright © 1994, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 65.17, and may be found at http://apl.aip.org/resource/1/applab/v65/i17/p2188_s1

Repository Citation

Look, D. C., Walters, D. C., Mier, M. G., & Sizelove, J. R. (1994). Nondestructive Mapping of Carrier Concentration and Dislocation Density in N(+)-Type GaAs. Applied Physics Letters, 65 (17), 2188-2190.
https://corescholar.libraries.wright.edu/physics/48

DOI

10.1063/1.112757