Electrical Field Enhanced Thermal Quenching of a Prominent thermally Stimulated Current Peak in Semi-insulating GaAs

Authors

Z-Q. Fang
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

5-1-1995

Abstract

Detailed experimental results are presented for a ‘‘thermal quenching’’ of thermal stimulated current signals in the most prominent trap in undoped semi‐insulating (SI) GaAs, T₅ with an activation energy of 0.27–0.31 eV. A possible model for the thermal quenching of T₅ is discussed, emphasizing the thermally stimulated nature of the quenching process, the effect of electric field and the formation of high‐field domains. The thermal quenching of T₅ can frequency be observed in SI GaAs grown by the vertical gradient freeze (VGF) technique, or by the liquid encapsulated Czochralski (LEC) technique under certain conditions.

Comments

Copyright © 1995, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 66.22, and may be found at http://apl.aip.org/resource/1/applab/v66/i22/p3033_s1

Repository Citation

Fang, Z., & Look, D. C. (1995). Electrical Field Enhanced Thermal Quenching of a Prominent thermally Stimulated Current Peak in Semi-insulating GaAs. Applied Physics Letters, 66 (22), 3033-3035.
https://corescholar.libraries.wright.edu/physics/52

DOI

10.1063/1.114268