High-Temperature Annealing in Electron-Irradiated CdS

Authors

David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

1-1974

Abstract

The room‐temperature irradiation of as‐grown n‐type CdS by 1‐MeV electrons results in an increase in carrier concentration. The damage anneals in the temperature range 250–300°C, and a study of the annealing kinetics reveals an activation energy of about 1.3 eV which is attributed to sulfur‐vacancy motion.

Comments

Copyright © 1974, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 45.1, and may be found at http://dx.doi.org/10.1063/1.1663011.

Repository Citation

Look, D. C. (1974). High-Temperature Annealing in Electron-Irradiated CdS. Journal of Applied Physics, 45 (1), 492-493.
https://corescholar.libraries.wright.edu/physics/614

DOI

10.1063/1.1663011