The room‐temperature irradiation of as‐grown n‐type CdS by 1‐MeV electrons results in an increase in carrier concentration. The damage anneals in the temperature range 250–300°C, and a study of the annealing kinetics reveals an activation energy of about 1.3 eV which is attributed to sulfur‐vacancy motion.
Look, D. C.
(1974). High-Temperature Annealing in Electron-Irradiated CdS. Journal of Applied Physics, 45 (1), 492-493.