Electrical Characteristics of Al‐Implanted ZnSe

Authors

B. K. Shin
Y. S. Park
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

5-1974

Abstract

Aluminum was implanted in ZnSe at 90 keV to a dose of 10¹⁵ ions/cm² at room temperature. Hall‐effect and sheet‐resistivity measurements were made on the samples for various annealing conditions. The implanted layer is found to be degenerate n‐type having a sheet resistivity of ∼10³ Ω/□, after annealing at 900°C for 4 h.

Comments

Copyright © 1974, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 24.9, and may be found at http://dx.doi.org/10.1063/1.1655250.

Repository Citation

Shin, B. K., Park, Y. S., & Look, D. C. (1974). Electrical Characteristics of Al‐Implanted ZnSe. Applied Physics Letters, 24 (9), 435-436.
https://corescholar.libraries.wright.edu/physics/615

DOI

10.1063/1.1655250