Novel Ga/AsCl₃/H₂ Reactor For Controlling Stoichiometry In The Growth Of Vapor Phase Epitaxy (VPE) GaAs

Authors

P. C. Colter
Cole W. Litton
Donald C. Reynolds
David C. Look, Wright State University - Main CampusFollow
Phil W. Yu
S. S. Li
W. L. Wang

Document Type

Conference Proceeding

Publication Date

9-15-1982

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Abstract

An AsCl3 vapor phase epitaxial reactor has been constructed which is capable of operation with a variable controlled Ga/As ratio. Layers grown in this reactor have been characterized by photoluminescence, electrical and DLTS measurements. Results to date indicate differing influence of the Ga/As gas phase ratio on <100> and <211A> orientation layers, particularly on deep level incorporation.

Comments

Presented at the Proceedings of SPIE: Semiconductor Growth Technology, Los Angeles, CA.

© (1982) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Repository Citation

Colter, P. C., Litton, C. W., Reynolds, D. C., Look, D. C., Yu, P. W., Li, S. S., & Wang, W. L. (1982). Novel Ga/AsCl₃/H₂ Reactor For Controlling Stoichiometry In The Growth Of Vapor Phase Epitaxy (VPE) GaAs. Proceedings of SPIE, 323, 28-35.
https://corescholar.libraries.wright.edu/physics/636

DOI

10.1117/12.934272