Document Type
Article
Publication Date
9-15-1989
Abstract
The sheet free‐carrier concentration in a thin, conducting layer on an insulating substrate is lower than the net, sheet‐dopant concentration because of free‐carrier depletion in the surface and interface regions. Here we develop an algorithm to give the true, net sheet‐donor concentration from the measured sheet‐Hall concentration under the assumption of a Gaussian donor profile, which is usually sufficiently accurate for ion‐implanted samples. Correction curves are generated for Si29 ions implanted into GaAs at energies of 60, 100, 130, 150, and 200 keV, and at doses of 1×1011–2×1014 ions/cm2. Also, the Hall mobilities and r factors are calculated at various carrier concentrations for NA/ND = 0 and NA/ND = 0.5.
Repository Citation
Look, D. C.
(1989). Hall-Effect Depletion Corrections in Ion-Implanted Samples: Si29 in GaAs. Journal of Applied Physics, 66 (6), 2420-2424.
https://corescholar.libraries.wright.edu/physics/654
DOI
10.1063/1.344250
Comments
Copyright © 1989, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 66.6, and may be found at http://dx.doi.org/10.1063/1.344250.