Surface and Interface Free-Carrier Depletion in GaAs Molecular Beam Epitaxial Layers: Demonstration of High Interface Charge

Authors

David C. Look, Wright State University - Main CampusFollow
C. E. Stutz
K. R. EvansFollow

Document Type

Article

Publication Date

2-12-1990

Abstract

Molecular beam epitaxial GaAs layers of electron concentration 1.69×10¹⁷ cm⁻³, and various thicknesses d=0.25, 0.50, 1.00, and 2.00 μm, have been grown on semi‐insulating GaAs substrates and characterized by the Hall effect and capacitance‐voltage (C‐V) techniques. A plot of sheet Hall concentration n_s vs d gives accurate values of (N_D−N_A) and (w_s+w_i), the sum of the surface and interface free‐carrier depletion widths, respectively. The C‐V measurements verify the value of N_D−N_A, and also give a good estimate of w_i. By comparing the value of w_i with depletion theory, it is shown unambiguously that the interface depletion is mainly due to interface states, of concentration 1.2×10¹² cm⁻² (below midgap). This result has important technological implications.

Comments

Copyright © 1990, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 56.7, and may be found at http://dx.doi.org/10.1063/1.102731.

Repository Citation

Look, D. C., Stutz, C. E., & Evans, K. R. (1990). Surface and Interface Free-Carrier Depletion in GaAs Molecular Beam Epitaxial Layers: Demonstration of High Interface Charge. Applied Physics Letters, 56 (7), 668-670.
https://corescholar.libraries.wright.edu/physics/655

DOI

10.1063/1.102731