Observation of Deep Defects in As-Rich GaAs Grown by the Molecular Beam Epitaxy Technique at 200 °C

Authors

M. O. Manasreh
David C. Look, Wright State University - Main CampusFollow
K. R. EvansFollow
C. E. Stutz

Document Type

Conference Proceeding

Publication Date

1990

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Comments

Presented at the 6th Conference on Semi-Insulating III-V Materials, Ontario, Toronto, Canada.

Repository Citation

Manasreh, M. O., Look, D. C., Evans, K. R., & Stutz, C. E. (1990). Observation of Deep Defects in As-Rich GaAs Grown by the Molecular Beam Epitaxy Technique at 200 °C. Semi-Insulating III-V Materials, Toronto 1990, 105.
https://corescholar.libraries.wright.edu/physics/657