Document Type
Article
Publication Date
5-1-2000
Abstract
A ZnO diode was fabricated by using a laser-doping technique to form a p-type ZnO layer on an n-type ZnO substrate. A zinc-phosphide compound, used as a phosphorous source, was deposited on the ZnO wafer and subjected to excimer-laser pulses. The current–voltage characteristics showed a diode characteristic between the phosphorous-doped p-layer and the n-type substrate. Moreover, light emission, with a band-edge component, was observed by forward current injection at 110 K.
Repository Citation
Aoki, T.,
Hatanaka, Y.,
& Look, D. C.
(2000). ZnO Diode Fabricated by Excimer-Laser Doping. Applied Physics Letters, 76 (22), 3257-3258.
https://corescholar.libraries.wright.edu/physics/66
DOI
10.1063/1.126599
Comments
Copyright © 2000, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 76.22, and may be found at http://apl.aip.org/resource/1/applab/v76/i22/p3257_s1.