Origin and Behavior of Main Electron Traps in Si-Implanted GaAs

Authors

Z-Q. Fang
H. Yamamoto
David C. Look, Wright State University - Main CampusFollow

Document Type

Conference Proceeding

Publication Date

1990

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Abstract

The electron traps in Si-implanted active layers(n∼10¹⁷ cm⁻³) have been studied by capacitance and conductance DLTS techniques in conjunction with different anneal conditions, which include rapid thermal anneals at different temperatures and furnace anneals with a Si₃N₄ cap or capless in an AsH₃ atmosphere. As compared to the electron traps in as-grown bulk n-GaAs (n∼4×10¹⁶ cm⁻³), nearly the same electron traps, i.e. EL2, EL3, ELM, EL5, EL6 and EL9 can be observed in the Si-implanted layers. Through a comparison with the annealing behavior of the main electron traps in bulk n-GaAs, the processing associated origins of some of the traps(EL2, EL3, EL4, EL5 and EL9) observed in Si-implanted GaAs layers have been determined. For some Si-implanted GaAs capped with Si₃N₄ and furnace annealed, traps EL3 and EMA dominate the trap EL2. In such layers it is found that emission due to EL3 is reduced while emission from EL12 is augmented by increasing the filling pulse width from 10 μs to 5×10³ μs. This phenomenon can be explained in terms of a defect reaction enhanced by electron capture, showing a metastability or bistability.

Comments

Presented at the 1990 MRS Spring Meeting, San Francisco, CA.

Copyright © Materials Research Society 1990.

Repository Citation

Fang, Z., Yamamoto, H., & Look, D. C. (1990). Origin and Behavior of Main Electron Traps in Si-Implanted GaAs. Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures, 184, 93.
https://corescholar.libraries.wright.edu/physics/660

DOI

10.1557/PROC-184-93