Metastable States in Semi-Insulating GaAs Revealed by Thermally Stimulated Current Spectroscopy

Authors

Z-Q. FangFollow
David C. Look, Wright State University - Main CampusFollow

Document Type

Conference Proceeding

Publication Date

1992

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Abstract

Thermally stimulated current spectroscopy (TSC) with near band-edge and infrared (IR) light excitation, in conjunction with photocurrent responses at low temperatures, has proved to be a very useful technique for investigating the quenching and recovery of EL2. During the IR quenching process, changes in trap species and carrier lifetime are correlated with the normal and metastable state of EL2. The traps observed in TSC spectra before and after IR quenching are believed to be due to point defects their complexes, especially complexes involving Aa_GA¹ and show a very clear stoichiometry dependence.

Comments

Presented at the 16th International Conference on Defects in Semiconductors (ICDS '16), Lehigh University, Bethlehem, PA.

Repository Citation

Fang, Z., & Look, D. C. (1992). Metastable States in Semi-Insulating GaAs Revealed by Thermally Stimulated Current Spectroscopy. Proceedings of the 16th International Conference on Defects in Semiconductors, 83-87, 991-996.
https://corescholar.libraries.wright.edu/physics/667

DOI

10.4028/www.scientific.net/MSF.83-87.991