Ga-Doped ZnO Films Grown on GaN Templates by Plasma-Assisted Molecular-Beam Epitaxy

Authors

H. J. Ko
Yanfang Chen, Wright State University - Main CampusFollow
S. K. Hong
H. Wenisch
T. Yao
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

12-4-2000

Abstract

We have investigated the structural and optical properties of Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. The carrier concentration in Ga-doped ZnO films can be controlled from 1.33×10¹⁸/cm³ to 1.13×10²⁰/cm³. Despite high Ga incorporation, the linewidth of (0002) ω-rocking curves of Ga-doped ZnO films still lies in the range from 5 to 15 arc min. Photoluminescence (PL) spectra of Ga-doped ZnO films show dominant near-bandedge emission with negligibly weak deep-level emission, independent of carrier concentration. The PL spectrum exhibits a new emission line at 3.358 eV, which corresponds to exciton emission bound to a Ga donor. To avoid degradation of the PL intensity, the maximum dopability of Ga in ZnO is determined to be around 2.6×10¹⁹/cm³.

Comments

Copyright © 2000, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 77.23, and may be found at http://apl.aip.org/resource/1/applab/v77/i23/p3761_s1.

Repository Citation

Ko, H. J., Chen, Y., Hong, S. K., Wenisch, H., Yao, T., & Look, D. C. (2000). Ga-Doped ZnO Films Grown on GaN Templates by Plasma-Assisted Molecular-Beam Epitaxy. Applied Physics Letters, 77 (23), 3761-3763.
https://corescholar.libraries.wright.edu/physics/67

DOI

10.1063/1.1331089