Defects in Low-Temperature-Grown MBE GaAs as Studied by a Variation of TSC Spectroscopy

Authors

Z-Q. FangFollow
David C. Look, Wright State University - Main CampusFollow

Document Type

Conference Proceeding

Publication Date

1991

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Abstract

A zero-bias thermally stimulated current (TSC) spectroscopy under both optical (1.96eV) and electrical excitation using samples with a Schottky contact on the top was applied to annealed LTMBE GaAs grown at different temperatures, and bulk SI GaAs with different stoichiometries. The results show that: 1) the new TSC technique is capable of revealing the traps at 235KA(0.79eV), T_a (0.33eV), T₄ (0.29eV), and T₆*(0.16eV); and 4) the trap densities in LTMBE samples are higher than those in the control samples and are dependent on the MBE growth temperature.

Comments

Presented at the 1991 MRS Fall Meeting, Boston, MA.

Copyright © Materials Research Society 1992.

Repository Citation

Fang, Z., & Look, D. C. (1991). Defects in Low-Temperature-Grown MBE GaAs as Studied by a Variation of TSC Spectroscopy. MRS Proceedings, 241, 57.
https://corescholar.libraries.wright.edu/physics/670

DOI

10.1557/PROC-241-57