Defects in Low-Temperature-Grown MBE GaAs as Studied by a Variation of TSC Spectroscopy
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A zero-bias thermally stimulated current (TSC) spectroscopy under both optical (1.96eV) and electrical excitation using samples with a Schottky contact on the top was applied to annealed LTMBE GaAs grown at different temperatures, and bulk SI GaAs with different stoichiometries. The results show that: 1) the new TSC technique is capable of revealing the traps at 235KA(0.79eV), Ta (0.33eV), T4 (0.29eV), and T6*(0.16eV); and 4) the trap densities in LTMBE samples are higher than those in the control samples and are dependent on the MBE growth temperature.
& Look, D. C.
(1991). Defects in Low-Temperature-Grown MBE GaAs as Studied by a Variation of TSC Spectroscopy. MRS Proceedings, 241, 57.