Infrared Transmission Topography: Application to Nondestructive Measurement of Dislocation Density and Carrier Concentration in Si-Doped GaAs Wafers

Authors

M. G. Mier
David C. Look, Wright State University - Main CampusFollow
J. R. Sizelove
D. C. Walters
D. L. Beasley

Document Type

Conference Proceeding

Publication Date

1996

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Comments

Presented at the 1995 International Workshop on Semiconductor Characterization, Gaithersburg, MD.

Repository Citation

Mier, M. G., Look, D. C., Sizelove, J. R., Walters, D. C., & Beasley, D. L. (1996). Infrared Transmission Topography: Application to Nondestructive Measurement of Dislocation Density and Carrier Concentration in Si-Doped GaAs Wafers. Semiconductor Characterization: Present Status and Future Needs, 659.
https://corescholar.libraries.wright.edu/physics/679