Optical Properties of GaN Grown on ZnO by Reactive Molecular Beam Epitaxy

Authors

F. Hamdani
A. Botchkarev
W. Kim
H. MorkoçFollow
M. Yeadon
J. M. Gibson
S.-C. Y. Tsen
David J. Smith
Donald C. Reynolds
David C. Look, Wright State University - Main CampusFollow
K. R. Evans
Cole W. Litton
William C. MitchelFollow
P. Hemenger

Document Type

Article

Publication Date

1-27-1997

Abstract

High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements point to high quality presumably due to the near match of both the crystal lattice parameter and the stacking order between GaN and ZnO. In addition, the good films lack the characteristic yellow photoluminescence band. Any misorientation of the GaN epilayer planes with respect to the ZnO substrate is not detectable with polarized reflectivity. The x-ray double crystal diffraction measurements indicate this misorientation is much smaller than those for GaN epilayers on SiC and Al₂O₃ . © 1997 American Institute of Physics.

Comments

Copyright © 1997, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 70.4, and may be found at http://dx.doi.org/10.1063/1.118183.

Repository Citation

Hamdani, F., Botchkarev, A., Kim, W., Morkoç, H., Yeadon, M., Gibson, J. M., Tsen, S. Y., Smith, D. J., Reynolds, D. C., Look, D. C., Evans, K. R., Litton, C. W., Mitchel, W. C., & Hemenger, P. (1997). Optical Properties of GaN Grown on ZnO by Reactive Molecular Beam Epitaxy. Applied Physics Letters, 70 (4), 467-469.
https://corescholar.libraries.wright.edu/physics/689

DOI

10.1063/1.118183