Electrical and Optical Properties of Annealed Semi-Insulating GaAs Grown by Vertical Zone Melt Technique
Electrical and optical properties of undoped semi-insulating GaAs grown by the vertical zone melt (VZM) technique and annealed at 950°C under As overpressure have been characterized. The 950°C annealing significantly improves the uniformity and increases both EL2 concentration and mobility. Cu incorporation into the VZM materials has been observed.
Reynolds, D. C.,
Look, D. C.,
Mier, M. G.,
Jones, R. L.,
& Henry, R. L.
(1999). Electrical and Optical Properties of Annealed Semi-Insulating GaAs Grown by Vertical Zone Melt Technique. Proceedings of the 10th Conference on Semiconducting and Insulating Materials, 25-28.