Deep Centers in a Free-Standing GaN Layer

Authors

Z-Q. Fang
David C. Look, Wright State University - Main CampusFollow
P. Visconti
D. F. Wang
C. Z. Lu
F. Yun
H. Morkoç
Seong-Ju S. Park
K. Y. Lee

Document Type

Article

Publication Date

4-1-2001

Abstract

Schottky barrier diodes, on both Ga and N faces of a ∼300-μm-thick free-standing GaN layer, grown by hydride vapor phase epitaxy (HVPE) on Al₂O₃ followed by laser separation, were studied by capacitance–voltage and deep level transient spectroscopy (DLTS) measurements. From a 1/C² vs V analysis, the barrier heights of Ni/Au Schottky contacts were determined to be different for the two polar faces: 1.27 eV for the Ga face, and 0.75 eV for the N face. In addition to the four common DLTS traps observed previously in other epitaxial GaN including HVPE-grown GaN a new trap B′ with activation energy E_T = 0.53 eV was found in the Ga-face sample. Also, trap E₁ (E_T = 0.18 eV), believed to be related to the N vacancy, was found in the N-face sample, and trap C (E_T = 0.35 eV) was in the Ga-face sample. Trap C may have arisen from reactive-ion-etching damage.

Comments

Copyright © 2001, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 78.15, and may be found at http://apl.aip.org/resource/1/applab/v78/i15/p2178_s1

Repository Citation

Fang, Z., Look, D. C., Visconti, P., Wang, D. F., Lu, C. Z., Yun, F., Morkoç, H., Park, S. S., & Lee, K. Y. (2001). Deep Centers in a Free-Standing GaN Layer. Applied Physics Letters, 78 (15), 2178-2180.
https://corescholar.libraries.wright.edu/physics/72

DOI

10.1063/1.1361273