ZnO/AlGaN Ultraviolet Light Emitting Diodes

Authors

E. V. Kalinina
A. E. Cherenkov
G. A. Onushkin
Ya I. Alivov
David C. Look, Wright State University - Main CampusFollow
B. M. Ataev
A. K. Omaev
C. M. Chukichev

Document Type

Conference Proceeding

Publication Date

2005

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Abstract

We report on the optical and electrical properties of n-ZnO/p/-AlGaN heterojunctions. Ga doped n-type ZnO layers were grown using chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers. AlGaN epitaxial layers with 12 at.% Al were grown on 6H-SiC by hydride vapor phase epitaxy. Rectifying diode-like behavior with a threshold voltage of 3.2 V was achieved. Intense ultraviolet electroluminescence peaking at a wavelength of 390 nm was observed at 300 and 500 K as a result of hole-injection from the n-ZnO layer into the p-AlGaN layer of the heterostructure.

Comments

Presented at the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectric Applications, St. Petersburg, Russia.

Repository Citation

Kalinina, E. V., Cherenkov, A. E., Onushkin, G. A., Alivov, Y. I., Look, D. C., Ataev, B. M., Omaev, A. K., & Chukichev, C. M. (2005). ZnO/AlGaN Ultraviolet Light Emitting Diodes. Zinc Oxide – A Material for Micro- and Optoelectronic Applications, 194, 211-216.
https://corescholar.libraries.wright.edu/physics/721

DOI

10.1007/1-4020-3475-X_18