Coupling of Phonons with Excitons Bound to Different Donors and Acceptors in Hexagonal GaN

Authors

K. P. Korona
A. Wysmolek
J. Kuhl
M. Kamińska
J. M. Baranowski
David C. Look, Wright State University - Main CampusFollow
S. S. Park

Document Type

Article

Publication Date

6-2006

Abstract

Time-resolved measurements of GaN with different donors (oxygen or silicon) and acceptors (zinc or magnesium) showed pronounced bound exciton lines and their phonon replicas. The analysis included three phonon modes characteristic for the wurtzite (hexagonal) phase: A₁(LO), E₁(TO) and E₂H. It was shown that relative amplitudes of replicas depended upon the chemical nature of the defects that the bind excitons. The replicas were stronger for acceptor- than for donor–related features. Huang-Rhys factors S = 0.06 ± 0.02 and S = 0.025 ± 0.01, were found for the A⁰X and the D⁰X LO replicas, respectively. A significant difference in phonon coupling to silicon and oxygen donor bound excitons has been observed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Repository Citation

Korona, K. P., Wysmolek, A., Kuhl, J., Kamińska, M., Baranowski, J. M., Look, D. C., & Park, S. S. (2006). Coupling of Phonons with Excitons Bound to Different Donors and Acceptors in Hexagonal GaN. physica status solidi (c), 3 (6), 1940-1943.
https://corescholar.libraries.wright.edu/physics/722

DOI

10.1002/pssc.200565223