Electrical Properties of Porous SiC
Document Type
Book Chapter
Publication Date
2008
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Abstract
This chapter is from the book Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications, which presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more.
Repository Citation
Look, D. C.,
& Fang, Z.
(2008). Electrical Properties of Porous SiC. Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications, 231-243.
https://corescholar.libraries.wright.edu/physics/732