ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters
Document Type
Conference Proceeding
Publication Date
6-2006
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Abstract
This paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film.
Repository Citation
Osinsky, A. V.,
Dong, J.,
Xie, J. Q.,
Hertzog, B.,
Dabiran, A. M.,
Chow, P. P.,
Pearton, S. J.,
Norton, D. P.,
Look, D. C.,
Schoenfeld, W.,
Lopatiuk, O.,
Chernyak, L.,
Cheung, M.,
Cartwright, A. N.,
& Gerhold, M.
(2006). ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters. MRS Proceedings, 892, 429-438.
https://corescholar.libraries.wright.edu/physics/733
DOI
10.1557/PROC-0892-FF18-01-EE09-01
Comments
Presented at the 2005 MRS Fall Meeting, Boston, MA.
Copyright © Materials Research Society 2006.