Investigations of ZnO Thin Films Grown on c-Al2O3 By Pulsed Laser Deposition in N2 + O2 Ambient

Authors

David J. Rogers
David C. Look, Wright State University - Main CampusFollow
F. Hosseini Téhérani
K. Minder
M. Razeghi
A. Largeteau
G. Demazeau
J. Morrod
K. A. Prior
A. Lusson
S. Hassani

Document Type

Article

Publication Date

7-2008

Abstract

ZnO films were deposited on c-Al₂O₃ using pulsed laser deposition both with and without N₂ in the growth ambient. X-ray diffraction revealed poorer crystal quality and surface morphology for one-step growths with N₂ in the ambient. A marked improvement in both the crystallographic and surface quality was obtained through use of two-step growths employing nominally undoped ZnO buffer layers prior to growth with N₂ in the ambient. All films showed majority n-type conduction in Hall measurements. Post-annealing for 30 minutes at 600 ºC in O₂ systematically reduced both the carrier concentration and the conductivity. A base room temperature carrier concentration of ∼ 10¹⁶ cm^–3 was linked to Al diffusing from the substrate. 4.2 K photoluminescence spectra exhibited blue bands associated with the growths having N₂ in the ambient. Temperature dependent Hall measurements were consistent with N being incorporated in the films. Processed devices did not, however, show rectifying behaviour or electroluminescence. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Comments

Special Issue: 34th International Symposium on Compound Semiconductors (ISCS-2007)

Repository Citation

Rogers, D. J., Look, D. C., Téhérani, F. H., Minder, K., Razeghi, M., Largeteau, A., Demazeau, G., Morrod, J., Prior, K. A., Lusson, A., & Hassani, S. (2008). Investigations of ZnO Thin Films Grown on c-Al2O3 By Pulsed Laser Deposition in N2 + O2 Ambient. physica status solidi (c), 5 (9), 3084-3087.
https://corescholar.libraries.wright.edu/physics/736

DOI

10.1002/pssc.200779315