Native Point Defects at ZnO Surfaces, Interfaces and Bulk Films

Authors

Leonard J. Brillson
Yufeng Dong
Filip Tuomisto
B. G. Svensson
A. Yu. Kuznetsov
Daniel R. Doutt
Howard L. Mosbacker
G. Cantwell
J. Zhang
J. J. Song
Zhaoqiang Fang, Wright State University - Main CampusFollow
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

7-2012

Abstract

The impact of electronically-active native point defects on ZnO optoelectronic technologies at the nanoscale is only now being explored. We are able to address the impact of these defects on Schottky barrier formation and doping using a combination of depth-resolved and scanned probe techniques. We clearly identify the optical transitions and energies of V_Zn and V_Zn clusters, Ga on Zn site donors, Li on Zn sites, the effects of different annealing methods on their spatial distributions in ion-implanted as well as Ga grown-in ZnO, and how V_Zn, V_Zn clusters, and V_O complexes contribute to near- and sub-surface carrier density. These results reveal the interplay between ZnO electronic defects, polarity, and surface nanostructure. Overall, the influence of native point defects on doping, Schottky barriers, and transport point to new ways for controlling these properties (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Repository Citation

Brillson, L. J., Dong, Y., Tuomisto, F., Svensson, B. G., Kuznetsov, A. Y., Doutt, D. R., Mosbacker, H. L., Cantwell, G., Zhang, J., Song, J. J., Fang, Z., & Look, D. C. (2012). Native Point Defects at ZnO Surfaces, Interfaces and Bulk Films. physica status solidi (c), 9 (7), 1566-1569.
https://corescholar.libraries.wright.edu/physics/750

DOI

10.1002/pssc.201100538