Plasma-Etching-Enhanced Deep Centers in n-GaN Grown by Metalorganic Chemical-Vapor Deposition

Authors

Z-Q. FangFollow
David C. Look, Wright State University - Main CampusFollow
X. L. Wang
J. Han
F. A. Khan
I. Adesida

Document Type

Article

Publication Date

3-1-2003

Abstract

By using deep-level transient spectroscopy (DLTS), deep centers have been characterized in unintentionally doped n-GaN samples grown by metalorganic chemical-vapor deposition and subjected to inductively coupled plasma reactive ion etching. At least six DLTS traps exist in the control sample: A₁ (∼0.90 eV), A_x (∼0.72 eV), B (0.61 eV), C₁ (0.44 eV), D (0.25 eV), and E₁ (0.17 eV), with B dominant. Then, as the etching bias-voltage increases from −50 to −150 V, trap D increases strongly and becomes dominant, while traps A₁, C (0.34 eV), and E₁ increase at a slower rate. Trap B, on the other hand, is nearly unchanged. Previous electron-irradiation studies are consistent with the E₁ traps being N-vacancy related. It is likely that the D traps are also, except that they are in the regions of dislocations.

Comments

Copyright © 2003, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 82.10, and may be found at http://apl.aip.org/resource/1/applab/v82/i10/p1562_s1

Repository Citation

Fang, Z., Look, D. C., Wang, X. L., Han, J., Khan, F. A., & Adesida, I. (2003). Plasma-Etching-Enhanced Deep Centers in n-GaN Grown by Metalorganic Chemical-Vapor Deposition. Applied Physics Letters, 82 (10), 1562-1564.
https://corescholar.libraries.wright.edu/physics/82

DOI

10.1063/1.1560562